Datasheet > KI4300DY

KI4300DY

更新时间： 2024-10-30 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管开关
页数	文件大小	规格书
2页	57K
描述
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KI4300DY 数据手册

SMD Type

ICIC

N-Channel 30-V (D-S), Reduced Qg

Fast Switching MOSFET with Schottky Diode

KI4300DY

Features

TrenchFET Power MOSFET

LITTLE FOOT Plus^TMIntegrated Schottky

PWM Optimized

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Symbol

V^DS

10 secs

Steady State

Unit

VDA

Gate-Source Voltage

VGS

6.4

5.1

Continuous Drain Current (TJ = 150 ) TA = 25

I^D

(MOSFET)*

T^A= 70

Pulsed Drain Current (MOSFET)

I^DM

Continuous Source Current (MOSFET Diode Conduction)*

Average Foward Current (Schottky)

Pulsed Foward Current (Schottky)

Maximum Power Dissipation (MOSFET)* TA = 25

T^A= 70

2.3

1.25

I^F

I^FM

2.5

1.6

2.2

1.4

1.38

0.88

1.25

0.8

Maximum Power Dissipation (Schottky)* T^A= 25

T^A= 70

-55 to 150

Operating Junction and Storage Temperature Range

T^J, Tstg

*Surface Mounted on 1" X 1" FR4 Board.

www.kexin.com.cn

中文翻译

下载PDF

与KI4300DY相关器件

型号	品牌	获取价格	描述	数据表
KI4330DY	TYSEMI	获取价格	TrenchFET Power MOSFETS 100 per Rg Tested Drain-Source Voltage Vds 30V
KI4330DY	KEXIN	获取价格	Dual N-Channel 30-V (D-S) MOSFET
KI4390DY	KEXIN	获取价格	N-Channel Qg, Fast Switching WFETTM
KI4390DY	TYSEMI	获取价格	Extremely Low QgdWFET Technology for Switching Losses TrenchFETTM Power MOSFET
KI4403BDY	KEXIN	获取价格	P-Channel 1.8-V (G-S) MOSFET
KI4433DY	KEXIN	获取价格	P-Channel 1.8-V (G-S) MOSFET
KI4453DY	KEXIN	获取价格	P-Channel 12-V (D-S) MOSFET
KI4464DY	KEXIN	获取价格	N-Channel 200-V (D-S) MOSFET
KI4464DY	TYSEMI	获取价格	PWM Optimized for (Lowest Qg and Low RG) TrenchFET Power MOSFET
KI4500BDY	KEXIN	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)