Datasheet > KI2305DS

KI2305DS

更新时间： 2024-10-30 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	49K
描述
P-Channel 1.25-W, 1.8-V (G-S) Mosfet

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中文翻译

获取价格

数据手册

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KI2305DS 数据手册

SMD Type

Transistors

P-Channel 1.25-W, 1.8-V (G-S) Mosfet

KI2305DS

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

P-Channel 1.25-W, 1.8-V (G-S) MOSFET.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source voltage

Symbol

V^DS

Rating

Unit

-8

Gate-source voltage

V^GS

3.5

2.8

Continuous drain current (T^J= 150

)

TA=25

TA=70

Pulsed drain current

I^DM

I^S

Continuous source current (diode conduction) *

-1.6

1.25

0.8

Power dissipation *

T^A=25

TA=70

Operating junction and storage temperature range

Junction-to-ambient 5 sec

Tj,Tstg

R^thJA

-55 to +150

100

Steady State

5 sec.

130

* Surface mounted on FR4 board, t

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