Datasheet > KI2306

KI2306

更新时间： 2024-06-27 12:12:50

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1192K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI2306 数据手册

SMD Type

N-Channel Enhancement Mode MOSFET

MOSFET

KI2306

SOT-23-3

Unit: mm

+0.2

-0.2

2.9

0.4

■ Features

+0.1

-0.05

●

RDS(ON)=0.030 @VGS=10V

RDS(ON)=0.035 @VGS=4.5V

DS(ON)

=0.052Ω@V =2.5V

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.2

-0.2

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Unless Otherwise Noted

Symbol

Parameter

Drain-source voltage

5sec

Steady State

Unit

Gate-source voltage

℃

@T =25

3.16

2.7

Continuous drain current

℃

@ TA=70

3.5

Pulsed drain current

IDM

℃

@TA=25

1.25

0.8

0.75

0.48

0.62

Maximum Power dissipation

℃

@ TA=70

Maximum Body-Diode Continuous Current

Thermal Resistance-Junction to Case (Note 1)

1.04

θJC

℃

≤

Maximum Junction to Ambient (Note 1)

10 sec

Steady State

Operating junction and storage temperature range

Note: 1. The device mounted on 1in2 FR4 board with 2 oz copper

RθJA

stg

-55 to +150

℃

T ,T

www.kesenes.com

12 3 4

中文翻译

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