Datasheet > KI2328DS

KI2328DS

更新时间： 2024-10-30 12:32:15

品牌	Logo	应用领域
TYSEMI		栅
页数	文件大小	规格书
2页	161K
描述
Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS -20 V

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中文翻译

获取价格

数据手册

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KI2328DS 数据手册

SMD Type

TransistIoCrs

Product specification

KI2328DS

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

Features

+0.1

-0.1

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5 sec

Steady State

Unit

100

Gate-Source Voltage

VGS

Continuous Drain Current(T^J=150 ) *1 T^A=25

------------------------------------------------T^A=70

1.5

1.2

1.15

0.92

I^D

Pulsed Drain Current *2

I^DM

I^AS

E^AS

I^S

Single-Pluse Avalanche Current *2 L = 1 0 mH

1.8

0.6

Single-Pulse Avalanche Energy

L = 1 0 mH

Continuous Source Current (Diode Conduction)*1

1.25

0.8

0.75

0.47

Power Dissipation *1

T^A=25

P^D

-------------------------------------------------T^A=70

150

Jumction Temperature

T^j

-55 to +150

Storage Temperature

T^stg

*1 Surface Mounted on 1" X 1" FR4 Board.

*2 Pulse width limited by maximum junction temperature.

Thermal Resistance Ratings Ta = 25

Parameter

Maximum Junction-to-Ambient *

Maximum Junction-to-Ambient

Symbol

R^thJA

Typical

Maximum

Unit

100

170

5 sec

Steady State

130

Maximum Junction-to-Foot (Drain) Steady State

* Surface Mounted on 1" X 1" FR4 Board.

R^thJF

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中文翻译

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