Datasheet > KI2337DS

KI2337DS

更新时间： 2024-10-30 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	63K
描述
P-Channel 12-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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KI2337DS 数据手册

SMD Type

TransistIoCrs

P-Channel 12-V (D-S) MOSFET

KI2337DS

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

TrenchFET Power MOSFET

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5 sec

-80

Unit

Gate-Source Voltage

V^GS

Continuous Drain Current(T^J=150

)

TC=25

-2.2

-1.75

---------------------------------------------- --TC=70

Continuous Drain Current(T^J=150 ) *1,2 TA=25

-1.2

I^DM

I^S

-0.96

----------------------------------------------

--TA=70

Pulsed Drain Current

-7

-2.1

-0.63

Continuous Source Drain Diode Current

T^C=25

Continuous Source Drain Diode Current *1,2 T^A=25

Avalanche Current

L = 0 1 mH

I^AS

Single-Pulse Avalanche Energy

E^AS

6.0

2.5

1.6

Power Dissipation

T^c=25

--------------------------------------------- -- -Tc=70

0.76

0.48

Power Dissipation *1,2

T^A=25

--------------------------------------------- - ---TA=70

Jumction Temperature

T^j

150

-55 to +150

260

Storage Temperature

Tstg

Soldering Recommendations (Peak Temperature)*3

*1Surface mounted on 1" x 1" FR4 Board.

*2 t = 10 sec

*3 Maximum under steady state conditions is 166 /W.

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