Datasheet > KI3055DY

KI3055DY

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1022K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI3055DY 数据手册

SMD Type

MOSFET

N-Channel MOSFET

KI3055DY

SOP-8

■ Features

● VDS (V) = 60V

● I

D = 6 A (VGS = 10V)

● R^DS(ON)＜ 150mΩ (VGS = 10V)

0.15

1.50

1~3.Source

4.Gate

5~8.Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

TA=25℃

TA=70℃

Continuous Drain Current

Pulsed Drain Current (tp ≤ 10 ms)

Power Dissipation TA=25℃

(Note.1)

(Note.2)

2.1

1.5

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

Thermal Resistance.Junction- to-Ambient

(Note.1)

(Note.2)

71.4

100

5.2

thJA

℃/W

Thermal Resistance.Junction- to-Case

RthJC

Maximum Lead Temperature for SolderingPurposes (Note.3)

Junction Temperature

260

150

-55 to 150

℃

Storage Temperature Range

stg

Note.1 :When surface mounted to an FR4 board using 0.5 sq in pad size.

Note.2 :When surface mounted to an FR4 board using minimum recommended pad size

Note.3: 1/8, from case for 12 seconds

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