Datasheet > KI2351DS

KI2351DS

更新时间： 2024-11-18 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	61K
描述
P-Channel 20-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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KI2351DS 数据手册

SMD Type

TransistIoCrs

P-Channel 20-V (D-S) MOSFET

KI2351DS

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

TrenchFET Power MOSFET

PWM Optimized

100 % Rg tested

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5 sec

-20

Unit

Gate-Source Voltage

V^GS

Continuous Drain Current(T^J=150

)

TC=25

-2.8

-2.4

---------------------------------------------- --TC=70

Continuous Drain Current(T^J=150 ) *1,2 TA=25

-2.2

-1.8

I^DM

I^S

----------------------------------------------

--TA=70

Pulsed Drain Current

-10

-2

Continuous Source Drain Diode Current

T^C=25

-0.91

Continuous Source Drain Diode Current *1,2 T^A=25

2.1

1.5

Power Dissipation

T^c=25

--------------------------------------------- -- -Tc=70

1.0

0.7

Power Dissipation *1,2

T^A=25

--------------------------------------------- - ---TA=70

Jumction Temperature

T^j

150

Storage Temperature

Tstg

-55 to +150

*1Surface mounted on 1" x 1" FR4 Board.

*2 t = 10 sec

Thermal Resistance Ratings Ta = 25

Parameter

Symbol

Typical

Maximum

115

Unit

R^thJA

R^thJF

Maximum Junction-to-Ambient *

5 sec

Maximum Junction-to-Foot (Drain) Steady State

* Surface Mounted on 1" X 1" FR4 Board.

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