Datasheet > KI3415P

KI3415P

更新时间： 2024-11-19 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	305K
描述
P-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KI3415P 数据手册

SMD Type

MOSFET

P-Channel MOSFET

KI3415P

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● VDS (V) =-20V

● ID =-4A (VGS =-4.5V)

● RDS(ON) ＜ 40mΩ (VGS =-4.5V)

● RDS(ON) ＜ 60mΩ (VGS =-2.5V)

● RDS(ON) ＜ 100mΩ (VGS =-1.8V)

● ESD Rating: 2000V HBM

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-20

±10

-4

Unit

Gate-Source Voltage

Continuous Drain Current

Ta = 25℃

-3.5

-30

1.5

Ta = 70℃

Pulsed Drain Current

Power Dissipation

(Note.1)

IDM

Ta = 25℃

Ta = 70℃

Thermal Resistance.Junction- to-Ambient t≤ 10s

Steady-State

thJA

thJL

100

℃/W

℃

Thermal Resistance.Junction- to-Lead

Junction Temperature

150

Junction Storage Temperature Range

stg

-55 to 150

Note.1: The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

www.kexin.com.cn

12 3 4

中文翻译

下载PDF

与KI3415P相关器件

型号	品牌	获取价格	描述	数据表
KI3415PDFN	KEXIN	获取价格	P-Channel MOSFET
KI3419P	KEXIN	获取价格	P-Channel MOSFET
KI3N10	KEXIN	获取价格	N-Channel MOSFET
KI3N10DS	KEXIN	获取价格	N-Channel MOSFET
KI4300DY	TYSEMI	获取价格	TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized
KI4300DY	KEXIN	获取价格	N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
KI4330DY	TYSEMI	获取价格	TrenchFET Power MOSFETS 100 per Rg Tested Drain-Source Voltage Vds 30V
KI4330DY	KEXIN	获取价格	Dual N-Channel 30-V (D-S) MOSFET
KI4390DY	KEXIN	获取价格	N-Channel Qg, Fast Switching WFETTM
KI4390DY	TYSEMI	获取价格	Extremely Low QgdWFET Technology for Switching Losses TrenchFETTM Power MOSFET