Datasheet > KI2319DS

KI2319DS

更新时间： 2024-09-13 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	51K
描述
P-Channel 40-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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KI2319DS 数据手册

SMD Type

TransistIoCrs

P-Channel 40-V (D-S) MOSFET

KI2319DS

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

TrenchFET Power MOSFET

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5 sec

Steady State

-40

Unit

Gate-Source Voltage

V^GS

Continuous Drain Current (T^J=150 ) * 1 TA=25

------------------------------------------------TA=70

-3.0

-2.4

-2.3

-1.85

-12

Pulsed Drain Current *2

I^DM

I^S

Continuous Source Current (diode conduction) *1

-1.0

-0.62

1.25

0.8

0.75

0.48

Power Dissipation *1

T^A=25

-------------------------------------------------TA=70

150

Jumction Temperature

-55 to +150

Storage Temperature

Tstg

* 1 Surface Mounted on FR4 Board.t

5 sec.

*2 Pulse width limited by maximum junction temperature.

Thermal Resistance Ratings Ta = 25

Parameter

Symbol

RthJA

Typical

Maximum

100

Unit

Maximum Junction-to-Ambient *1

120

Maximum Junction-to-Ambient *2

Steady State

166

Maximum Junction-to-Foot (Drain) Steady State

R^thJF

* 1. Surface Mounted on FR4 Board, t

* 2. Surface Mounted on FR4 Board.

5 sec.

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