Datasheet > KI2325DS

KI2325DS

更新时间： 2024-11-30 11:29:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	53K
描述
P-Channel 150-V (D-S) MOSFET

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中文翻译

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数据手册

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KI2325DS 数据手册

SMD Type

TransistIoCrs

P-Channel 150-V (D-S) MOSFET

KI2325DS

SOT-23

Unit: mm

+0.1

2.9

-0.1

Features

+0.1

0.4

-0.1

TrenchFET Power MOSFET

Ultra Low On-Resistance

Small Size

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5 sec

Steady State

-150

Unit

Gate-Source Voltage

V^GS

Continuous Drain Current(T^J=150 ) *1,2 TA=25

------------------------------------------------TA=70

-0.69

-0.55

-0.53

-0.43

-1.6

Pulsed Drain Current

I^DM

I^S

Continuous Source Current (diode conduction) *1,2

Single-Pluse Avalanche Current L = 1 0 mH

Single-Pulse Avalanche Energy L = 1 0 mH

-1.0

-0.6

4.5

I^AS

EAS

1.01

1.25

0.8

0.75

0.48

Power Dissipation *1 ,2

TA=25

-------------------------------------------------TA=70

150

Jumction Temperature

T^j

-55 to +150

Storage Temperature

Tstg

*1 Surface Mounted on 1" X 1" FR4 Board.

*2 Pulse width limited by maximum junction temperature.

Thermal Resistance Ratings Ta = 25

Parameter

Maximum Junction-to-Ambient *

Maximum Junction-to-Ambient

Symbol

R^thJA

Typical

Maximum

100

Unit

5 sec

Steady State

120

166

Maximum Junction-to-Foot (Drain) Steady State

* Surface Mounted on 1" X 1" FR4 Board.

R^thJF

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