Datasheet > KI2323

KI2323

更新时间： 2024-06-27 12:13:38

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	1619K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI2323 数据手册

SMD Type

MOSFET

P-Channel Enhancement MOSFET

KI2323

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

+0.1

-0.1

0.4

■ Features

● VDS (V) =-20V

● ID =-4.7A (VGS =-4.5V)

● RDS(ON) ＜ 39mΩ (VGS =-4.5V)

● RDS(ON) ＜ 52mΩ (VGS =-2.5V)

● RDS(ON) ＜ 68mΩ (VGS =-1.8V)

+0.02

-0.02

+0.1

0.15

0.95

-0.1

+0.1

-0.2

1.9

1. Gat e

2. Source

3. Drai n

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

5 sec

Steady State

Unit

-20

Drain-Source Voltage

VDS

±8

Gate-Source Voltage

-4.7

-3.8

-3.7

-2.9

Continuous Drain Current

(T = 150℃) *1

Ta = 25℃

Ta = 70℃

-20

Pulsed Drain Current

Power Dissipation

IDM

1.25

0.8

0.75

0.48

Ta = 25℃

Ta = 70℃

100

166

Thermal Resistance.Junction- to-Ambient t≤5 sec

Steady State

thJA

thJF

℃/W

℃

Thermal Resistance.Junction- to-Foot

Junction Temperature

150

-55 to 150

Storage Temperature Range

Tstg

*1 Surface Mounted on 1” x 1” FR4 Board.

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