Datasheet > KI2310DS

KI2310DS

更新时间： 2024-11-19 18:09:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	472K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI2310DS 数据手册

SMD Type

MOSFET

N-Channel Enhancement MOSFET

KI2310DS

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

+0.1

-0.1

0.4

■ Features

● VDS=20V

● I

D = 6 .5A

● RDS(on)= 22mΩ@VGS=4.5V ,I

D=6.5A

+0.02

-0.02

+0.1

● RDS(on)= 30mΩ@VGS=2.5V ,I

D=5.5A

0.15

0.95

-0.1

+0.1

-0.2

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±10

6.5

TA=25℃

TA=70℃

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

4.8

1.3

TA=25℃

TA=70℃

0.8

Junction Temperature

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

=250μA, V^GS=0V

DS=20V, VGS=0V

DS=20V, VGS=0V, T

DS=0V, VGS=±10V

Zero Gate Voltage Drain Current

DSS

GSS

μA

J=55℃

Gate-Body Leakage Current

Gate Threshold Voltage

±10

GS(th)

0.45

^DS=V^GS, ID=250μA

GS=4.5V, I

GS=2.5V, I

=6.5A

Static Drain-Source On-Resistance

RDS(On)

mΩ

D=5.5A

Forward Transconductance *1

Maximum Body-Diode Continuous Current

Diode Forward Voltage

gFS

DS=5V, I

D=6.5A

1.6

1.2

=1.6A,VGS=0V

0.76

*1: Pulse test: PW ≤300us duty cycle≤ 2%

■ Marking

Marking

2310

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