Datasheet > KI2314EDS

KI2314EDS

更新时间： 2024-11-20 12:32:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	161K
描述
TrenchFET Power MOSFET ESD Protected: 3000 V Drain-Source Voltage VDS 20 V

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中文翻译

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数据手册

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KI2314EDS 数据手册

SMD Type

TransistIoCrs

Product specification

KI2314EDS

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

TrenchFET Power MOSFET

ESD Protected: 3000 V

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5secs

Steady State

Unit

Gate-Source Voltage

V^GS

4.9

3.9

3.77

Continuous Drain Current (T^J= 150 )*1 T^A= 25

T^A= 70

I^D

Pulsed Drain Current

I^DM

I^AS

E^AS

I^S

Avalanche Current*2

L = 0.1 mH

11.25

Single Avalanche Energy

Continuous Source Current (Diode Conduction)*1

Power Dissipation *1 TA = 25

T^A= 70

1.25

0.8

0.75

0.48

-55 to 150

Operating Junction and Storage Temperature Range

T^J, T^stg

*1 Surface Mounted on 1"X 1" FR4 Board.

*2 Pulse width limited by maximum junction temperature.

Thermal Resistance Ratings

Parameter

Symbol

R^thJA

Typical

Maximum

100

Unit

120

5 sec

Maximum Junction-to-Ambient *

Steady-State

166

Maximum Junction-to-Foot (Drain)

R^thJF

* Surface Mounted on 1"X 1" FR4 Board.

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