Datasheet > KI2306DS

KI2306DS

更新时间： 2024-09-13 12:04:27

品牌	Logo	应用领域
TYSEMI		测试
页数	文件大小	规格书
4页	398K
描述
TrenchFET Power MOSFET Rg Tested Drain-source voltage VDS 30 V

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中文翻译

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数据手册

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KI2306DS 数据手册

SSMMDD TTyyppe

TransistIoCrs

Product specification

KI2306

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

Features

+0.1

-0.1

TrenchFET Power MOSFET

100% Rg Tested

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source voltage

Symbol

V^DS

Rating

Unit

Gate-source voltage

V^GS

3.5

2.8

Continuous drain current (T^J= 150 ) *1,2 T^A=25

I^D

TA=70

Pulsed drain current

I^DM

I^S

Continuous source current (diode conduction) *1,2

1.25

0.8

Maximum Power dissipation *1,2

T^A=25

TA=70

P^D

Operating junction and storage temperature range

Tj,Tstg

R^thJA

-55 to +150

100

Maximum Junction to Ambienta

5 sec

Steady State

130

*1 Surface Mounted on FR4 Board.

*2 t 5 sec

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