Datasheet > KI2312

KI2312

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	205K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI2312 数据手册

SMD Type

MOSFET

N-Channel Enhancement MOSFET

KI2312

627ꢅꢆꢋꢅꢋ

8QLWꢊ PP

ꢃꢀꢁꢆ

ꢅꢀꢁꢄ

ꢆꢁꢇ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢀꢁꢂ

Ƶ Features

ƽ VDS (V) = 20V

ƽ ID = 4.9 A (VGS =4.5V)

ƽ RDS(ON) ˘ 33m¡ (VGS = 4.5V)

ƽ RDS(ON) ˘ 40m¡ (VGS = 2.5V)

ꢃꢀꢁꢀꢆ

ꢅꢀꢁꢀꢆ

ꢃꢀꢁꢄ

ꢅꢀꢁꢄ

ꢀꢁꢄꢈ

ꢀꢁꢇꢈ

ꢃꢀꢁꢄ

ꢅꢀꢁꢆ

ꢄꢁꢇ

ƽ RDS(ON) ˘ 51m¡ (VGS = 1.8V)

ꢂ

ꢀ

ꢁ

ꢀꢁ *DWH

ꢂꢁ 6RXUFH

ꢃꢁ 'UDLQ

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

5 sec

Steady State

Unit

±8

VDS

Gate-Source Voltage

4.9

3.9

3.77

3.0

Ta=25ć

Continuous Drain Current

J =150ć

Ta=70ć

Pulsed Drain Current

Avalanche Current

L=0.1mH

11.25

Single Avalanche Energy

1.25

0.8

0.75

0.48

Ta=25ć

Ta=70ć

Power Dissipation *1

100

166

Thermal Resistance.Junction- to-Ambient *1 tİ5 sec

Steady State

thJA

thJF

ć/W

Thermal Resistance.Junction-to-Foot

Junction Temperature

150

Storage Temperature Range

-55 to 150

stg

*1 Surface Mounted on 1” x 1” FR4 Board.

*2 Pulse width limited by maximum junction temperature

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中文翻译

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