Datasheet > KI2312DS

KI2312DS

更新时间： 2024-11-18 12:04:27

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	136K
描述
1.8-V Rated RoHS Compliant Drain-Source Voltage VDS 20 V

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KI2312DS 数据手册

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Product specification

KI2312DS

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

1.8-V Rated

RoHS Compliant

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

5 sec

Steady State

Unit

Gate-Source Voltage

V^GS

Continuous Drain Current (T^J=150 ) *2 T^A=25

------------------------------------------------T^A=70

4.9

3.9

3.77

3.0

I^D

Pulsed Drain Current *2

I^DM

I^AS

E^AS

I^S

11.25

1.0

Avalanche Current*2

L = 0.1 mH

Single Avalanche Energy

Continuous Source Current (diode conduction) *2

1.25

0.8

0.75

0.48

Power Dissipation *2 T^A=25

P^D

-------------------------------------------------T^A=70

-55 to 150

Jumction Temperature and Storage Temperature

T^j.T^stg

*1 Surface Mounted on 1”x 1”FR4 Board.

*2 Pulse width limited by maximum junction temperature

Thermal Resistance Ratings

Parameter

Symbol

R^thJA

R^thJF

Typical

Maximum

100

Unit

Maximum Junction-to-Ambient *

5 sec

Maximum Junction-to-Ambient * Steady State

Maximum Junction-to-Foot Steady State

120

166

* Surface Mounted on 1”x 1”FR4 Board.

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