Datasheet > KDS3912

KDS3912

更新时间： 2024-11-17 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	63K
描述
100V Dual N-Channel PowerTrench MOSFET

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中文翻译

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数据手册

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KDS3912 数据手册

SMD Type

ICIC

100V Dual N-Channel PowerTrench MOSFET

KDS3912

Features

3 A, 100 V. RDS(ON) = 125m @ VGS = 10 V

R^DS(ON)= 135m @ VGS = 6 V

Low gate charge (14 nC typical)

Fast switching speed

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

100

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

Drain Current Pulsed

I^D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Power Dissipation for Single Operation (Note 1c)

Operating and Storage Temperature

P^D

1.6

0.9

T^J, TSTG

-55 to 175

Thermal Resistance Junction to Case (Note 1)

Thermal Resistance Junction to Ambient (Note 1a)

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