Datasheet > KDS4148U_09

KDS4148U_09

更新时间： 2024-11-04 11:29:27

品牌	Logo	应用领域
KEC		二极管局域网
页数	文件大小	规格书
2页	42K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

获取价格

数据手册

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KDS4148U_09 数据手册

SEMICONDUCTOR

KDS4148U

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

· Small Package : USC.

· Low Forward Voltage.

· Fast Reverse Recovery Time.

· Small Total capacitance.

DIM

MILLIMETERS

2.50+0.1

MAXIMUM RATING (Ta=25℃)

1.25 0.05

0.90 0.05

CHARACTERISTIC

SYMBOL RATING

UNIT

0.30+0.06/-0.04

1.70+0.05

V_RM

V_R

Maximum (Peak) Reverse Voltage

Reverse Voltage

100

MIN 0.17

0.126+0.03

1. ANODE

0~0.1

1.0 MAX

0.15+0.05

2. CATHODE

I_FM

I_O

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10mS)

450

0.4+0.05

150

+4/-2

4~6

I_FSM

P_D*

T_j

Power Dissipation

200

℃

USC

Junction Temperature

150

T_stg

Storage Temperature Range

-55∼ 150

℃

* : Mounted on a glass epoxy circuit board of 20×20㎜,

Pad dimension of 4×4㎜.

Marking

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

V_F(1)

V_F(2)

V_F(3)

I_R

TEST CONDITION

MIN.

TYP.

0.60

0.72

0.90

MAX.

UNIT

I_F=1mA

I_F=10mA

Forward Voltage

I_F=100mA

V_R=75V

1.20

0.5

2.0

4.0

Reverse Current

μA

C_T

V_R=0V, f=1MHz

I_F=10mA

Total Capacitance

Reverse Recovery Time

0.9

t_rr

1.6

2009. 3. 25

Revision No : 3

1/2

中文翻译

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