Datasheet > KDS4953

KDS4953

更新时间： 2024-09-15 12:31:39

品牌	Logo	应用领域
TYSEMI		栅极
页数	文件大小	规格书
2页	189K
描述
5 A, -30 V. RDS(ON) = 55m RDS(ON) = 95m Low gate charge(6nC typical)

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KDS4953 数据手册

SMD Type

Product specification

KDS4953

Features

-5 A, -30 V. R^DS(ON)= 55m @ V^GS= -10V

R^DS(ON)= 95m @ V^GS=-4.5V

Low gate charge(6nC typical)

High performance trench technology for extremely low R^DS(ON)

High power and current handling capability

Fast switching speed

1: Source 1

2: Gate 1

3: Source 2

4: Gate 2

7,8: Drain 1

5,6: Drain 2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

-30

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1a)

-5

I^D

Drain Current Pulsed

-20

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Power Dissipation for Single Operation (Note 1c)

Operating and Storage Temperature

P^D

1.6

-55 to 175

T^J, T^STG

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Case (Note 1)

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4008-318-123

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