Datasheet > KDS4470

KDS4470

更新时间： 2024-11-17 12:31:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	326K
描述
12.5 A, 40 V. RDS(ON) = 9m VGS = 10 V High power and current handling capability

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KDS4470 数据手册

SSMMDD TTyyppee

MOSFIECT

Product specification

KDS4470

Features

12.5 A, 40 V. R^DS(ON)= 9m @ V^GS= 10 V

Low gate charge (45 nC typical)

High performance trench technology for extremely low R^DS(ON)

High power and current handling capability

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

V^GS

+30/-20

12.5

Drain Current Continuous (Note 1a)

Drain Current Pulsed

I^D

Power dissipation

(Note 1a)

2.5

P^D

(Note 1b)

(Note 1c)

1.4

1.2

Operating and Storage Temperature Range

T^J, T^STG

-55 to 175

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Ambient (Note 1c)

Thermal Resistance Junction to Case (Note 1)

125

http://www.twtysemi.com

sales@twtysemi.com

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