Datasheet > KDS4470

KDS4470

更新时间： 2024-11-01 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	63K
描述
40V N-Channel PowerTrench MOSFET

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中文翻译

获取价格

数据手册

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KDS4470 数据手册

SMD Type

ICIC

40V N-Channel PowerTrench MOSFET

KDS4470

Features

12.5 A, 40 V. RDS(ON) = 9m @ VGS = 10 V

Low gate charge (45 nC typical)

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

V^GS

+30/-20

12.5

Drain Current Continuous (Note 1a)

Drain Current Pulsed

I^D

Power dissipation

(Note 1a)

2.5

(Note 1b)

(Note 1c)

1.4

1.2

Operating and Storage Temperature Range

T^J, TSTG

-55 to 175

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Ambient (Note 1c)

Thermal Resistance Junction to Case (Note 1)

125

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与KDS4470相关器件

型号	品牌	获取价格	描述	数据表
KDS4501H	TYSEMI	获取价格	N-Channel 9.3 A, 30 V RDS(ON) = 18m RDS(ON) = 23m 5.6 A, -20 V RDS(ON) = 46 m
KDS4501H	KEXIN	获取价格	Complementary PowerTrench Half-Bridge MOSFET
KDS4559	KEXIN	获取价格	60V Complementary PowerTrench MOSFET
KDS4559	TYSEMI	获取价格	N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m 3.5 A, -60 V RDS(ON) = 105
KDS4953	KEXIN	获取价格	Dual 30V P-Channel PowerTrench MOSFET
KDS4953	TYSEMI	获取价格	5 A, -30 V. RDS(ON) = 55m RDS(ON) = 95m Low gate charge(6nC typical)
KDS5670	TYSEMI	获取价格	10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V High power and current handling capability
KDS5670	KEXIN	获取价格	60V N-Channel PowerTrench TM MOSFETl
KDS6375	KEXIN	获取价格	P-Channel 2.5V Specified PowerTrench MOSFET
KDS6685	KEXIN	获取价格	30V P-Channel PowerTrench MOSFET