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K7D161871M-HC40 PDF预览

K7D161871M-HC40

更新时间: 2024-09-18 05:09:03
品牌 Logo 应用领域
三星 - SAMSUNG 双倍数据速率静态存储器
页数 文件大小 规格书
14页 257K
描述
DDR SRAM, 1MX18, 1.6ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-153

K7D161871M-HC40 数据手册

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K7D163671M  
K7D161871M  
512Kx36 & 1Mx18 SRAM  
Document Title  
16M DDR SYNCHRONOUS SRAM  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 0.1  
History  
DraftData  
March. 1999  
April. 2000  
Remark  
Advance  
Advance  
Initial document.  
Addition of New speed bin -25  
New part number from KM736FS16017 to K7D163671M  
Package height changed.  
Rev. 0.2  
Leakage current test condition changed from VDD to VDDQ  
Package height changed.(From 2.4 to 2.5)  
May. 2000  
Advance  
Rev. 0.3  
Rev. 0.5  
Rev. 0.6  
Rev. 0.7  
ZQ tolerance changed from 10% to 15%  
Aug. 2000  
Jan. 2001  
April. 2001  
May. 2001  
Advance  
Deleted -HC25 part(Part Number, Idd, AC Characterisctics)  
Add-HC37 part(Part Number, Idd, AC Characteristics)  
Preliminary  
Preliminary  
Preliminary  
Clarification on the features and the timing waveforms regarding the  
burst controllability.  
Package thermal characteristics add  
IDD37 x36 changed from 800mA to 850mA  
IDD37 x18 changed from 750mA to 800mA  
Rev. 1.0  
Rev. 2.0  
Add-HC40 part(Part Number, Idd, AC Characteristics)  
Final specification release.  
Sep. 2001  
Jan. 2002  
Final  
Final  
Absolute Maximum Rating VDDQ changed from 3.13V to 2.3V  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 2.0  
- 1 -  
Jan. 2002  

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