是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CQCC-N15 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 4.73 |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 134 mJ |
外壳连接: | SOURCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.207 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 15 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 25 W | 最大脉冲漏极电流 (IDM): | 32 A |
认证状态: | Qualified | 参考标准: | MIL-19500/557 |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTX2N6796U | INFINEON |
完全替代 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
IRFE130 | INFINEON |
完全替代 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTXV2N6796 | INFINEON |
功能相似 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N6798 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANTXV2N6798 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A) | |
JANTXV2N6798E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANTXV2N6798U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTXV2N6800 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANTXV2N6800 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A) | |
JANTXV2N6800E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANTXV2N6800U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED | |
JANTXV2N6802 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=2.5A) | |
JANTXV2N6802 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 |