JANTXV2N6802

更新时间： 2024-01-09 03:56:54

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	201K
描述
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=2.5A)

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Provisional Data Sheet No. PD-9.433B

JANTX2N6802

JANTXV2N6802

[REF:MIL-PRF-19500/557]

HEXFET^®POWER MOSFET

[GENERIC:IRFF430]

N-CHANNEL

500 Volt, 1.5Ω HEXFET

Product Summary

Part Number

JANTX2N6802

JANTXV2N6802

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

2.5A

500V

1.5Ω

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6802, JANTXV2N6802 Units

@ V

= 10V, T = 25°C Continuous Drain Current

2.5

@ V

= 10V, T = 100°C Continuous Drain Current

1.5

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

0.20

±20

dv/dt

3.5

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

(0.063 in. (1.6mm) from

300

^oC

case for 10.5 seconds)

0.98 (typical)

Weight

To Order

12 3 4 5 6

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