是否无铅: | 含铅 | 生命周期: | Transferred |
零件包装代码: | LCC | 包装说明: | CHIP CARRIER, R-CQCC-N15 |
针数: | 18 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.27 |
雪崩能效等级(Eas): | 180 mJ | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 2.1 A | 最大漏源导通电阻: | 1.725 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
元件数量: | 1 | 端子数量: | 15 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 8.4 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/563 |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N6849 | INFINEON |
获取价格 |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
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JANTXV2N6849U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
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JANTXV2N6851 | INFINEON |
获取价格 |
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A) |
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JANTXV2N6851U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
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JANTXV2N6896 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-204AA |
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JANTXV2N6898 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE |
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JANTXV2N6902 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA |
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JANTXV2N6904 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA |
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JANTXV2N6968 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,7.5A I(D),TO-213AA |
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JANTXV2N6987 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, |
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