Datasheet > 晶体管 > 功率场效应晶体管> JANTXV2N6804

JANTXV2N6804

更新时间： 2024-11-26 23:01:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
7页	152K
描述
TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A)

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中文翻译

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JANTXV2N6804 数据手册

PD - 90549C

IRF9130

JANTX2N6804

JANTXV2N6804

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

THRU-HOLE (TO-204AA/AE)

[REF:MIL-PRF-19500/562]

100V, P-CHANNEL

Product Summary

Part Number

BVDSS

RDS(on)

IRF9130

-100V

0.30 Ω -11A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

TO-3

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of parelleling and temperature

stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= 0V, T = 25°C

Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

-11

-7.0

-50

= 0V, T = 100°C

@ T = 25°C

W/°C

0.60

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

-11

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

dv/dt

-5.5

-55 to 150

V/ns

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

11.5 (typical)

For footnotes refer to the last page

www.irf.com

01/22/01

12 3 4 5 6 7

中文翻译

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与JANTXV2N6804相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N6806	INFINEON	获取价格	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
JANTXV2N6845	INFINEON	获取价格	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)
JANTXV2N6845U	INFINEON	获取价格	-100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTXV2N6845U with Hermet
JANTXV2N6847	INFINEON	获取价格	POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=1.5ohm, Id=-2.5A)
JANTXV2N6847U	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
JANTXV2N6849	INFINEON	获取价格	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
JANTXV2N6849U	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
JANTXV2N6851	INFINEON	获取价格	POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A)
JANTXV2N6851U	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
JANTXV2N6896	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-204AA

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