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JANTXV2N6847 PDF预览

JANTXV2N6847

更新时间: 2024-11-24 23:01:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
6页 203K
描述
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=1.5ohm, Id=-2.5A)

JANTXV2N6847 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.553B  
JANTX2N6847  
JANTXV2N6847  
[REF:MIL-PRF-19500/563]  
HEXFET® POWER MOSFET  
[GENERIC:IRFF9220]  
P-CHANNEL  
-200 Volt, 1.5HEXFET  
Product Summary  
Part Number  
JANTX2N6847  
JANTXV2N6847  
BVDSS  
RDS(on)  
ID  
HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transis-  
tors. The efficient geometry achieves very low on-  
state resistance combined with high transconductance.  
-200V  
1.5Ω  
-2.5A  
HEXFET transistors also feature all of the well-es-  
tablish advantages of MOSFETs, such as voltage  
control, very fast switching, ease of paralleling and  
electrical parameter temperature stability. They are  
well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio  
amplifiers, and high energy pulse circuits, and virtu-  
ally any application where high reliability is required.  
Features:  
Avalanche Energy Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Parameter  
JANTX2N6847, JANTXV2N6847 Units  
I
@ V  
= -10V, T = 25°C Continuous Drain Current  
-2.5  
D
GS  
C
A
I
D
@ V  
= -10V, T = 100°C Continuous Drain Current  
-1.6  
-10  
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
DM  
@ T = 25°C  
P
20  
W
W/K ➄  
V
D
C
0.16  
V
GS  
dv/dt  
±20  
-5.0  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
STG  
(0.063 in. (1.6mm) from  
300  
oC  
g
case for 10.5 seconds)  
0.98 (typical)  
Weight  
To Order  
 
 

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