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JANTXV2N6800 PDF预览

JANTXV2N6800

更新时间: 2024-11-03 23:01:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
6页 201K
描述
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A)

JANTXV2N6800 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, TO-205AF, 3 PINReach Compliance Code:compliant
风险等级:5.15其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):0.51 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:1.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-205AFJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):14 A
认证状态:Qualified参考标准:MIL-19500/557
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANTXV2N6800 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.432B  
JANTX2N6800  
JANTXV2N6800  
[REF:MIL-PRF-19500/557]  
HEXFET® POWER MOSFET  
[GENERIC:IRFF330]  
N-CHANNEL  
400 Volt, 1.0HEXFET  
Product Summary  
Part Number  
JANTX2N6800  
JANTXV2N6800  
BVDSS  
RDS(on)  
ID  
HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transis-  
tors. The efficient geometry achieves very low on-  
state resistance combined with high transconductance.  
3.0A  
400V  
1.0Ω  
HEXFET transistors also feature all of the well-es-  
tablish advantages of MOSFETs, such as voltage  
control, very fast switching, ease of paralleling and  
electrical parameter temperature stability. They are  
well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio  
amplifiers, and high energy pulse circuits, and virtu-  
ally any application where high reliability is required.  
Features:  
Avalanche Energy Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Parameter  
JANTX2N6800, JANTXV2N6800 Units  
I
D
@ V  
= 10V, T = 25°C Continuous Drain Current  
3.0  
GS  
C
A
I
@ V  
= 10V, T = 100°C Continuous Drain Current  
2.0  
12.0  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
DM  
@ T = 25°C  
P
25  
W
W/K ➄  
V
D
C
0.20  
V
GS  
dv/dt  
±20  
4.0  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
STG  
oC  
g
(0.063 in. (1.6mm) from  
300  
case for 10.5 seconds)  
0.98 (typical)  
Weight  
To Order  
 
 

JANTXV2N6800 替代型号

型号 品牌 替代类型 描述 数据表
IRFF330 INFINEON

完全替代

400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF330 with Hermetic Packag
2N6800 INFINEON

完全替代

400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6800 with Hermetic Packagi

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