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JANTXV2N3879 PDF预览

JANTXV2N3879

更新时间: 2024-11-27 11:24:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
2页 58K
描述
NPN POWER SILICON TRANSISTOR

JANTXV2N3879 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.22Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):7 A
集电极-发射极最大电压:75 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-66
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):35 W认证状态:Qualified
参考标准:MIL-19500/526E子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

JANTXV2N3879 数据手册

 浏览型号JANTXV2N3879的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 526  
Devices  
Qualified Level  
JANTX  
JANTXV  
2N3879  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
Value  
75  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
120  
7.0  
5.0  
7.0  
Collector Current  
IC  
Total Power Dissipation  
@ TC = 250C (1)  
35  
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
TO-66*  
(TO-213AA)  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 200 mW/0C for TC > 250C  
5.0  
R
qJC  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc  
Collector-Emitter Cutoff Current  
VCE = 50 Vdc  
Collector-Emitter Cutoff Current  
VCE = 100 Vdc, VBE = 1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 120 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
75  
Vdc  
Vdc  
V(BR)  
CEO  
5.0  
4.0  
25  
ICEO  
ICEX  
ICBO  
IEBO  
mAdc  
mAdc  
mAdc  
10  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

JANTXV2N3879 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N3879 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR
2N5429LEADFREE CENTRAL

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Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2

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