生命周期: | Contact Manufacturer | 包装说明: | POST/STUD MOUNT, O-MUPM-X4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.1 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JESD-30 代码: | O-MUPM-X4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500/374 | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 40 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JANTXV2N3997 | APITECH | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 |
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JANTXV2N3997 | MICROSEMI | NPN POWER SWITCHING SILICON TRANSISTOR |
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JANTXV2N3998 | MICROSEMI | NPN POWER SWITCHING SILICON TRANSISTOR |
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JANTXV2N3998 | APITECH | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 |
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JANTXV2N3999 | APITECH | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 |
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JANTXV2N3999 | MICROSEMI | NPN POWER SWITCHING SILICON TRANSISTOR |
获取价格 |