5秒后页面跳转
JANTX2N3743 PDF预览

JANTX2N3743

更新时间: 2024-12-01 12:05:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管高压
页数 文件大小 规格书
2页 60K
描述
PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397

JANTX2N3743 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:BCY
包装说明:TO-39, 3 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.3
外壳连接:COLLECTOR最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-39
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Qualified
参考标准:MIL-19500/397H子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz

JANTX2N3743 数据手册

 浏览型号JANTX2N3743的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP HIGH VOLTAGE SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 397  
Devices  
Qualified Level  
JAN, JANTX  
JANTXV  
2N3743  
2N4930  
2N4931  
MAXIMUM RATINGS  
Ratings  
Sym 2N3743 2N4930 2N4931 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
300  
200  
200  
5.0  
250  
Vdc  
VCEO  
VCBO  
VEBO  
IC  
300  
250  
Vdc  
Vdc  
200  
mAdc  
Total Power Dissipation  
@TA = +250C 1  
@TC = +250C 2  
1.0  
5.0  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
TO-39*  
stg  
(TO-205AD)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
35  
Unit  
0C/W  
Thermal Resistance Junction-to-Case  
R
qJC  
1) Derate linearly 5.71 mW/0C for TA > +250C  
2) Derate linearly 28.6 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 1.0 mAdc  
300  
200  
250  
2N3743  
2N4930  
2N4931  
Vdc  
V(BR)  
CEO  
Collector-Emitter Breakdown Voltage  
300  
200  
250  
IC = 100 mAdc  
2N3743  
2N4930  
2N4931  
Vdc  
Vdc  
V(BR)  
CBO  
Emitter-Base Breakdown Voltage  
IE = 100 mAdc  
5.0  
V(BR)  
EBO  
Collector-Base Cutoff Current  
VCB = 250 Vdc  
VCB = 150 Vdc  
250  
250  
250  
2N3743  
2N4930  
2N4931  
ICBO  
hAdc  
VCB = 200 Vdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTX2N3743 替代型号

型号 品牌 替代类型 描述 数据表
2N6431 CENTRAL

功能相似

Small Signal Transistors
2N3743 MICROSEMI

功能相似

PNP HIGH VOLTAGE SILICON TRANSISTOR

与JANTX2N3743相关器件

型号 品牌 获取价格 描述 数据表
JANTX2N3743U4 MICROSEMI

获取价格

Transistor
JANTX2N3749 MICROSEMI

获取价格

PNP POWER SILICON TRANSISTOR
JANTX2N3762 MICROSEMI

获取价格

PNP SWITCHING SILICON TRANSISTOR
JANTX2N3762L MICROSEMI

获取价格

PNP SWITCHING SILICON TRANSISTOR
JANTX2N3763 MICROSEMI

获取价格

PNP SWITCHING SILICON TRANSISTOR
JANTX2N3763L MICROSEMI

获取价格

PNP SWITCHING SILICON TRANSISTOR
JANTX2N3764 MICROSEMI

获取价格

PNP SWITCHING SILICON TRANSISTOR
JANTX2N3765 MICROSEMI

获取价格

PNP SWITCHING SILICON TRANSISTOR
JANTX2N3766 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTX2N3767 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR