Datasheet > JANTX2N3791

JANTX2N3791

更新时间： 2024-01-21 07:21:46

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管高功率电源
页数	文件大小	规格书
2页	58K
描述
PNP HIGH POWER SILICON TRANSISTOR

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数据手册
替代型号

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JANTX2N3791 数据手册

TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 379

Devices

Qualified Level

JAN

2N3791

2N3792

JANTX

JANTXV

MAXIMUM RATINGS

Symbol 2N3791

2N3792

Ratings

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

V_CEO

V_CBO

V_EBO

I_B

7.0

4.0

Collector Current

I_C

Total Power Dissipation

@ T_A= +25⁰C ⁽¹⁾

@ T_C= +100⁰C ⁽²⁾

5.0

⁰C

85.7

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

TO-3*

(TO-204AA)

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

1.17

qJC

1) Derate linearly @ 28.57 mW/⁰C for T_A> +25⁰C

2) Derate linearly @ 0.857 mW/⁰C for T_C> +100⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

Symbol

Min.

Max.

Unit

Vdc

2N3791

2N3792

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 50 Vdc

V_CE= 70 Vdc

Collector-Emitter Cutoff Current

V_CE= 60 Vdc, V_BE= 1.5 Vdc

V_CE= 80 Vdc, V_BE= 1.5 Vdc

5.0

mAdc

2N3791

2N3792

I_CES

5.0

2N3791

2N3792

I_CEX

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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JANTX2N3791 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N3791	MICROSEMI	完全替代	PNP HIGH POWER SILICON TRANSISTOR
JAN2N3791	MICROSEMI	完全替代	PNP HIGH POWER SILICON TRANSISTOR
2N3791	MICROSEMI	完全替代	PNP HIGH POWER SILICON TRANSISTOR

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