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JANTX2N3791 PDF预览

JANTX2N3791

更新时间: 2024-11-30 22:57:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管高功率电源
页数 文件大小 规格书
2页 58K
描述
PNP HIGH POWER SILICON TRANSISTOR

JANTX2N3791 数据手册

 浏览型号JANTX2N3791的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 379  
Devices  
Qualified Level  
JAN  
2N3791  
2N3792  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Symbol 2N3791  
2N3792  
80  
Ratings  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
VCEO  
VCBO  
VEBO  
IB  
60  
80  
7.0  
4.0  
10  
Collector Current  
IC  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +1000C (2)  
5.0  
W
W
0C  
85.7  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
TO-3*  
(TO-204AA)  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1.17  
R
qJC  
1) Derate linearly @ 28.57 mW/0C for TA > +250C  
2) Derate linearly @ 0.857 mW/0C for TC > +1000C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N3791  
2N3792  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 50 Vdc  
VCE = 70 Vdc  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc, VBE = 1.5 Vdc  
VCE = 80 Vdc, VBE = 1.5 Vdc  
5.0  
5.0  
mAdc  
mAdc  
2N3791  
2N3792  
ICES  
5.0  
5.0  
2N3791  
2N3792  
ICEX  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

JANTX2N3791 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N3791 MICROSEMI

完全替代

PNP HIGH POWER SILICON TRANSISTOR
JAN2N3791 MICROSEMI

完全替代

PNP HIGH POWER SILICON TRANSISTOR
2N3791 MICROSEMI

完全替代

PNP HIGH POWER SILICON TRANSISTOR

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