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JANTX2N3811 PDF预览

JANTX2N3811

更新时间: 2024-11-04 20:12:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
3页 127K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, SIMILAR TO TO-78, 6 PIN

JANTX2N3811 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-78
包装说明:CYLINDRICAL, O-MBCY-W6针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.23
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:60 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):250
JEDEC-95代码:TO-78JESD-30 代码:O-MBCY-W6
JESD-609代码:e0元件数量:2
端子数量:6最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
参考标准:MIL-19500表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

JANTX2N3811 数据手册

 浏览型号JANTX2N3811的Datasheet PDF文件第2页浏览型号JANTX2N3811的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
PNP SILICON DUAL TRANSISTOR  
Qualified per MIL-PRF-19500 /336  
DEVICES  
LEVELS  
2N3810  
2N3811  
JAN  
2N3810L  
2N3810U  
2N3811L  
2N3811U  
JANTX  
JANTV  
JANS  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
60  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
60  
Vdc  
5.0  
50  
Vdc  
mAdc  
One  
Both  
Section 1  
Sections 2  
PT  
200  
350  
mW  
°C  
Total Power Dissipation  
@ TA = +25°C  
Operating & Storage Junction Temperature  
Range  
TJ, Tstg  
-65 to +200  
TO-78  
Note:  
1. Derate linearly 1.143mW/°C for TA > +25°C (one section)  
2. Derate linearly 2.00mW/°C for TA > +25°C (both sections)  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
V(BR)CEO  
60  
Vdc  
IC = 100μAdc  
Collector-Base Cutoff Current  
VCB = 50Vdc  
ηAdc  
μAdc  
10  
10  
ICBO  
VCB = 60Vdc  
Emitter-Base Cutoff Current  
VEB = 4.0Vdc  
VEB = 5.0Vdc  
10  
10  
ηAdc  
μAdc  
IEBO  
T4-LDS-0118 Rev. 1 (091095)  
Page 1 of 3  

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