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JANTX2N3999 PDF预览

JANTX2N3999

更新时间: 2024-11-27 20:28:47
品牌 Logo 应用领域
APITECH 晶体管
页数 文件大小 规格书
5页 295K
描述
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin

JANTX2N3999 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.09Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):80JEDEC-95代码:TO-111
JESD-30 代码:O-MUPM-D3元件数量:1
端子数量:3最高工作温度:175 °C
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):2 W认证状态:Not Qualified
参考标准:MIL子类别:Other Transistors
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzVCEsat-Max:0.25 V
Base Number Matches:1

JANTX2N3999 数据手册

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