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JANTX2N4261 PDF预览

JANTX2N4261

更新时间： 2024-02-23 03:10:48
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
18页 107K
描述
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 30MA I(C) | TO-72

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中文翻译

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JANTX2N4261 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.61Base Number Matches：1

JANTX2N4261 数据手册

 浏览型号JANTX2N4261的Datasheet PDF文件第2页浏览型号JANTX2N4261的Datasheet PDF文件第3页浏览型号JANTX2N4261的Datasheet PDF文件第4页浏览型号JANTX2N4261的Datasheet PDF文件第5页浏览型号JANTX2N4261的Datasheet PDF文件第6页浏览型号JANTX2N4261的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion measures necessary to  
comply with this document shall be completed by 2 July 2002.  
MIL-PRF-19500/511E  
2 April 2002  
SUPERSEDING  
MIL-PRF-19500/511D  
19 January 2001  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING  
TYPE 2N4261, 2N4261UB, JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP silicon, switching transistors. Four  
levels of product assurance are provided for each encapsulated device type and two levels for unencapsulated dice  
as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (TO-72), figure 2 (UB) and figure 3 (JANHC, JANKC).  
1.3 Maximum ratings.  
R
ΘJA  
P
V
V
V
I
C
T
TJ and T  
T
CBO  
CEO  
EBO  
J
STG  
T
= +25°C (1)  
A
mW  
200  
V dc  
15  
V dc  
15  
V dc  
4.5  
mA dc  
30  
°C  
°C  
°C/mW  
200  
-65 to +200  
0.860  
(1) Derate linearly 1.14 mW/°C above TA = +25°C.  
1.4 Primary electrical characteristics at TA = +25°C, unless otherwise specified.  
h
h
Switching  
(1)  
(1)  
h
|h  
|
FE1  
FE2  
r ’ C  
b c  
(1)  
FE3  
fe2  
V
I
= 1.0 V dc  
V
= 1.0 V dc  
CE  
= 30 mA dc  
V
= 1.0 V dc  
V
I
= 10 V dc  
V
= 4.0 V dc  
CE  
CE  
CE  
CE  
t
t
I
on  
I
= 1 mA dc  
= 10 mA dc  
= 10 mA dc  
I = 5 mA dc  
off  
C
C
C
C
C
f = 100 MHz  
f = 31.8 MHz  
ps  
ns  
ns  
Min  
25  
30  
20  
20  
Max  
150  
60  
2.5  
3.5  
See note on next page.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,  
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...18

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JANTX2N4261UB ETC

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JANTX2N4399 MICROSEMI

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JANTX2N4405 ETC

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JANTX2N4449 RAYTHEON

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JANTX2N4449U ETC

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 		TRANSISTOR | BJT | NPN | 15V V(BR)CEO | LLCC
JANTX2N4449UA ETC

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 		TRANSISTOR | BJT | NPN | 15V V(BR)CEO | LLCC
JANTX2N4449UB ETC

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 		TRANSISTOR | BJT | NPN | 20V V(BR)CEO | LLCC
JANTX2N4854 RAYTHEON

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JANTX2N4854U MICROSEMI

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 		Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon,

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