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JANTX2N4399 PDF预览

JANTX2N4399

更新时间: 2024-09-29 12:05:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关局域网高功率电源
页数 文件大小 规格书
2页 58K
描述
PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433

JANTX2N4399 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.22
外壳连接:COLLECTOR最大集电极电流 (IC):30 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Qualified参考标准:MIL-19500/433F
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANTX2N4399 数据手册

 浏览型号JANTX2N4399的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 433  
Devices  
Qualified Level  
JANTX  
JANTXV  
2N4399  
2N5745  
MAXIMUM RATINGS  
Ratings  
Symbol 2N4399 2N5745 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
80  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
60  
80  
5.0  
7.5  
Collector Current  
30  
20  
IC  
Total Power Dissipation  
@ TA =+ 250C (1)  
@ TC = +1000C (2)  
5.0  
115  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-55 to +200  
TJ, T  
stg  
TO-3*  
(TO-204AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
3
Thermal Resistance,  
Junction-to-Case  
R
0.875  
35  
qJC  
0C/W  
Junction-to-Ambient  
R
qJA  
1) Derate linearly @ 28.57 mW/0C for TA > +250C  
2) Derate linearly @ 1.15 W/0C for TC > +1000C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N4399  
2N5745  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
VCE = 80 Vdc  
100  
100  
2N4399  
2N5745  
ICEO  
mAdc  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc, VBE = 1.5 Vdc  
VCE = 80 Vdc, VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 5.0 Vdc  
5.0  
5.0  
2N4399  
2N5745  
ICEX  
mAdc  
mAdc  
5.0  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTX2N4399 替代型号

型号 品牌 替代类型 描述 数据表
2N4399 MICROSEMI

完全替代

PNP HIGH POWER SILICON TRANSISTOR

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