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JANTX2N3996 PDF预览

JANTX2N3996

更新时间: 2024-09-28 00:01:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关晶体管电源开关
页数 文件大小 规格书
3页 59K
描述
NPN POWER SWITCHING SILICON TRANSISTOR

JANTX2N3996 数据手册

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TECHNICAL DATA  
NPN POWER SWITCHING SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 374  
Devices  
Qualified Level  
JAN  
2N3996  
2N3997  
2N3998  
2N3999  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
Symbol  
VCEO  
VCBO  
VEBO  
IB  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
100  
8.0  
0.5  
5.0  
10(1)  
2.0  
30  
Collector Current  
Adc  
IC  
Total Power Dissipation  
@ TA = +250C (2)  
@ TC = +1000C (3)  
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
TO-111*  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
3.33  
R
qJC  
1) This value applies for tp £ 1.0 ms, duty cycle £ 50%  
2) Derate linearly 11.4 mW/0C for TA > +250C  
3) Derate linearly 300 mW/0C for TC > +1000C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 50 mAdc  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
80  
Vdc  
Vdc  
V(BR)  
CEO  
100  
V(BR)  
CBO  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
Collector-Emitter Cutoff Current  
VCE = 80 Vdc, VBE = 0  
Emitter-Base Cutoff Current  
VEB = 5.0 Vdc  
10  
ICEO  
ICES  
mAdc  
hAdc  
200  
200  
10  
hAdc  
mAdc  
IEBO  
VEB = 8.0 Vdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTX2N3996 替代型号

型号 品牌 替代类型 描述 数据表
2N3996 MICROSEMI

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