5秒后页面跳转
JANTX2N3868S PDF预览

JANTX2N3868S

更新时间: 2024-11-26 22:57:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关
页数 文件大小 规格书
2页 56K
描述
Silicon PNP Power Transistors

JANTX2N3868S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.21
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-205AD
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C最低工作温度:-55 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Qualified
参考标准:MIL-19500/350表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):600 ns最大开启时间(吨):100 ns
Base Number Matches:1

JANTX2N3868S 数据手册

 浏览型号JANTX2N3868S的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SWITCHING SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 350  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N3867  
2N3867S  
2N3868  
2N3868S  
MAXIMUM RATINGS  
2N3867 2N3868  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
2N3867S  
40  
2N3868S  
Ratings  
Collector-Emitter Voltage  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
60  
Collector-Base Voltage  
40  
60  
Emitter-Base Voltage  
4.0  
3.0  
TO-5*  
2N3867, 2N3868  
Collector Current -- Continuous  
Total Power Dissipation  
@ TA = 250C(1)  
1.0  
10  
-55 to +200  
W
W
0C  
PT  
@ TC = 250C(2)  
Operating & Storage Temperature Range  
THERMAL CHARACTERISTICS  
Characteristics  
TOP, TSTG  
Symbol  
Max.  
Unit  
0C/W  
TO-39*  
(TO-205AD)  
2N3867S, 2N3868S  
Thermal Resistance, Junction-to-Case  
17.5  
R
qJC  
1) Derate linearly 5.71 mW/0C for TA > +250C  
2) Derate linearly 57.1 mW/0C for TC > +250C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Symbol  
Min.  
Max.  
Unit  
Vdc  
Vdc  
40  
60  
IC = 100 mAdc  
2N3867, S  
2N3868, S  
V(BR)  
CBO  
Collector-Emitter Breakdown Voltage  
IC = 20 mAdc  
40  
60  
2N3867, S  
2N3868, S  
V(BR)  
CEO  
Emitter-Base Breakdown Voltage  
IE = 100 mAdc  
Vdc  
V(BR)  
EBO  
4.0  
Collector-Emitter Cutoff Current  
VEB = 2.0 Vdc, VCE = 40 Vdc  
VEB = 2.0 Vdc, VCE = 60 Vdc  
Collector-Base Cutoff Current  
VCB = 40 Vdc  
VCB = 60 Vdc  
Emitter-Base Cutoff Current  
VEB = 4 Vdc  
mAdc  
1.0  
1.0  
2N3867, S  
2N3868, S  
ICEX  
mAdc  
mAdc  
100  
100  
2N3867, S  
2N3868, S  
ICBO  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTX2N3868S 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N3868 MICROSEMI

完全替代

Silicon PNP Power Transistors
JAN2N3868S MICROSEMI

完全替代

Silicon PNP Power Transistors
JAN2N3868 MICROSEMI

完全替代

Silicon PNP Power Transistors

与JANTX2N3868S相关器件

型号 品牌 获取价格 描述 数据表
JANTX2N3879 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTX2N3902 ETC

获取价格

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2.5A I(C) | TO-3
JANTX2N3960 ETC

获取价格

TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-18
JANTX2N3960UB MICROSEMI

获取价格

Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
JANTX2N3996 MICROSEMI

获取价格

NPN POWER SWITCHING SILICON TRANSISTOR
JANTX2N3997 MICROSEMI

获取价格

NPN POWER SWITCHING SILICON TRANSISTOR
JANTX2N3997 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4
JANTX2N3998 MICROSEMI

获取价格

NPN POWER SWITCHING SILICON TRANSISTOR
JANTX2N3998 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANTX2N3999 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3