是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.21 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-205AD |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 最低工作温度: | -55 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Qualified |
参考标准: | MIL-19500/350 | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 600 ns | 最大开启时间(吨): | 100 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTX2N3868 | MICROSEMI |
完全替代 |
Silicon PNP Power Transistors | |
JAN2N3868S | MICROSEMI |
完全替代 |
Silicon PNP Power Transistors | |
JAN2N3868 | MICROSEMI |
完全替代 |
Silicon PNP Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N3879 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTX2N3902 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2.5A I(C) | TO-3 | |
JANTX2N3960 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-18 | |
JANTX2N3960UB | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3 | |
JANTX2N3996 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR | |
JANTX2N3997 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR | |
JANTX2N3997 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 | |
JANTX2N3998 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR | |
JANTX2N3998 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
JANTX2N3999 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 |