5秒后页面跳转
JANTX2N3960 PDF预览

JANTX2N3960

更新时间: 2024-09-28 00:00:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
16页 66K
描述
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-18

JANTX2N3960 数据手册

 浏览型号JANTX2N3960的Datasheet PDF文件第2页浏览型号JANTX2N3960的Datasheet PDF文件第3页浏览型号JANTX2N3960的Datasheet PDF文件第4页浏览型号JANTX2N3960的Datasheet PDF文件第5页浏览型号JANTX2N3960的Datasheet PDF文件第6页浏览型号JANTX2N3960的Datasheet PDF文件第7页 
The documentation and process conversion measures necessary to  
comply with this document shall be completed by 20 May 2002.  
INCH-POUND  
MIL-PRF-19500/399D  
20 February 2002  
SUPERSEDING  
MIL-PRF-19500/399C  
29 May 2001  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING  
TYPE 2N3960 AND 2N3960UB  
JAN, JANTX, JANTXV, JANS, JANHC AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN silicon, switching transistors. Four  
levels of product assurance are provided for each device type and two levels for unencapsulated chips as specified  
in MIL-PRF-19500.  
1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (UB), and figure 3 (JANHC, JANKC).  
1.3 Maximum ratings.  
PT (1)  
VCBO  
VCEO  
VEBO  
TJ and TSTG  
TA = +25°C  
mW  
400  
V dc  
20  
V dc  
12  
V dc  
4.5  
°C  
-65 to +200  
(1) Derate linearly 2.3 mW/°C above TA = +25°C.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.  
Box 3990, Columbus, OH 43216-5000 by using the Standardization Document Improvement Proposal (DD Form  
1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

与JANTX2N3960相关器件

型号 品牌 获取价格 描述 数据表
JANTX2N3960UB MICROSEMI

获取价格

Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
JANTX2N3996 MICROSEMI

获取价格

NPN POWER SWITCHING SILICON TRANSISTOR
JANTX2N3997 MICROSEMI

获取价格

NPN POWER SWITCHING SILICON TRANSISTOR
JANTX2N3997 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4
JANTX2N3998 MICROSEMI

获取价格

NPN POWER SWITCHING SILICON TRANSISTOR
JANTX2N3998 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANTX2N3999 APITECH

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JANTX2N3999 MICROSEMI

获取价格

NPN POWER SWITCHING SILICON TRANSISTOR
JANTX2N4026 MOTOROLA

获取价格

1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, TO-206AA, 3 PIN
JANTX2N4028 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO