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JANTX2N3810L PDF预览

JANTX2N3810L

更新时间： 2024-01-25 04:25:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
17页 91K
描述
TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78

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中文翻译

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JANTX2N3810L 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-N6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.22
Is Samacsys：N最大集电极电流 (IC)：0.05 A
集电极-发射极最大电压：60 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：125JEDEC-95代码：TO-78
JESD-30 代码：R-PDSO-N6JESD-609代码：e0
元件数量：2端子数量：6
最高工作温度：200 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235极性/信道类型：PNP
认证状态：Qualified参考标准：MIL-19500
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：20晶体管元件材料：SILICON
Base Number Matches：1

JANTX2N3810L 数据手册

 浏览型号JANTX2N3810L的Datasheet PDF文件第2页浏览型号JANTX2N3810L的Datasheet PDF文件第3页浏览型号JANTX2N3810L的Datasheet PDF文件第4页浏览型号JANTX2N3810L的Datasheet PDF文件第5页浏览型号JANTX2N3810L的Datasheet PDF文件第6页浏览型号JANTX2N3810L的Datasheet PDF文件第7页 
The documentation and process conversion measures necessary to  
comply with this document shall be completed by 4 April, 2002.  
INCH-POUND  
MIL-PRF-19500/396H  
4 January 2002  
SUPERSEDING  
MIL-PRF-19500/396G  
21 April 2000  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING  
TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, AND 2N3765  
JAN, JANTX, JANTXV, JANS, JANHC AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four  
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two  
levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1, 2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39), 2N3764  
and 2N3765 (TO - 46) and figure 2 (die) herein.  
1.3 Maximum ratings.  
Types  
PT  
VCBO  
V dc  
VCEO  
V dc  
VEBO  
V dc  
IC  
TOP and TSTG  
R
θJC  
TA = +25°C  
W
A dc  
°C  
°C/W  
2N3762  
2N3762L  
2N3763  
2N3763L  
2N3764  
2N3765  
1.0 (1)  
1.0 (1)  
1.0 (1)  
1.0 (1)  
0.5 (2)  
0.5 (2)  
40  
40  
60  
60  
40  
60  
40  
40  
60  
60  
40  
60  
5
5
5
5
5
5
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
60  
60  
60  
60  
88  
88  
(1) Derate linearly at 5.71 mW/°C above TA = +25°C.  
(2) Derate linearly at 2.86 mW/°C above TA = +25°C.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O.  
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form  
1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...17

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JANTX2N3811 MICROSEMI

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JANTX2N3811L MICROSEMI

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JANTX2N3811U ETC

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JANTX2N3821 MICROSEMI

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 		RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
JANTX2N3821 SOLITRON

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 		N-CHANNEL JFETS - 1
JANTX2N3822 MICROSEMI

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 		RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
JANTX2N3822 MOTOROLA

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 		VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, SIMILAR TO TO-72, 4 PIN
JANTX2N3822 SOLITRON

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 		N-CHANNEL JFETS - 1
JANTX2N3823 SOLITRON

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 		N-CHANNEL JFETS - 1

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