Datasheet > JANTX2N3810L

JANTX2N3810L

更新时间： 2024-11-04 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
17页	91K
描述
TRANSISTOR \| BJT \| PAIR \| PNP \| 60V V(BR)CEO \| 50MA I(C) \| TO-78

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JANTX2N3810L 数据手册

The documentation and process conversion measures necessary to

comply with this document shall be completed by 4 April, 2002.

INCH-POUND

MIL-PRF-19500/396H

4 January 2002

SUPERSEDING

MIL-PRF-19500/396G

21 April 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, AND 2N3765

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four

levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two

levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1, 2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39), 2N3764

and 2N3765 (TO - 46) and figure 2 (die) herein.

1.3 Maximum ratings.

Types

P_T

V_CBO

V dc

V_CEO

V dc

V_EBO

V dc

I_C

T_OPand T_STG

θJC

T_A= +25°C

A dc

°C

°C/W

2N3762

2N3762L

2N3763

2N3763L

2N3764

2N3765

1.0 (1)

0.5 (2)

1.5

-65 to +200

(1) Derate linearly at 5.71 mW/°C above T_A= +25°C.

(2) Derate linearly at 2.86 mW/°C above T_A= +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...17

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与JANTX2N3810L相关器件

型号	品牌	获取价格	描述	数据表
JANTX2N3810U	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| PNP \| 60V V(BR)CEO \| 50MA I(C) \| TO-78
JANTX2N3811	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
JANTX2N3811L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
JANTX2N3811U	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| PNP \| 60V V(BR)CEO \| 50MA I(C) \| TO-78
JANTX2N3821	MICROSEMI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
JANTX2N3821	SOLITRON	获取价格	N-CHANNEL JFETS - 1
JANTX2N3822	MICROSEMI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
JANTX2N3822	MOTOROLA	获取价格	VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, SIMILAR TO TO-72, 4 PIN
JANTX2N3822	SOLITRON	获取价格	N-CHANNEL JFETS - 1
JANTX2N3823	SOLITRON	获取价格	N-CHANNEL JFETS - 1