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JANTX2N3771 PDF预览

JANTX2N3771

更新时间: 2024-11-30 22:57:27
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美高森美 - MICROSEMI 晶体晶体管开关局域网高功率电源
页数 文件大小 规格书
2页 61K
描述
NPN HIGH POWER SILICON TRANSISTOR

JANTX2N3771 数据手册

 浏览型号JANTX2N3771的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 518  
Devices  
Qualified Level  
JANTX  
JANTXV  
2N3771  
2N3772  
MAXIMUM RATINGS  
2N3771  
40  
2N3772  
Ratings  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
100  
7.0  
5.0  
20  
VCEO  
VCBO  
VEBO  
IB  
50  
7.0  
7.5  
30  
Collector Current  
IC  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +250C (2)  
6.0  
W
W
0C  
PT  
150  
Operating & Storage Junction Temperature Range  
TO-3*  
(TO-204AA)  
-65 to +200  
TJ, T  
stg  
1) Derate linearly 34.2 mW/0C for TA > +250C  
2) Derate linearly 857 mW/0C for TC > +250C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
IC = 200 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
40  
60  
2N3771  
2N3772  
V(BR)  
CEO  
Collector-Emitter Breakdown Voltage  
45  
70  
Vdc  
IC = 200 mAdc, RBE = 100 W  
2N3771  
2N3772  
V(BR)  
CER  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc, VBE = -1.5 Vdc  
50  
90  
Vdc  
2N3771  
2N3772  
V(BR)  
CEX  
Collector-Emitter Cutoff Current  
VCE = 30 Vdc  
VCE = 50 Vdc  
Emitter-Base Cutoff Current  
VBE = 7.0 Vdc  
5.0  
5.0  
mAdc  
mAdc  
mAdc  
2N3771  
2N3772  
ICEO  
IEBO  
ICEX  
2.0  
2N3771  
2N3772  
Collector-Emitter Cutoff Current  
VBE = 1.5 Vdc, VCE = 50 Vdc  
VBE = 1.5 Vdc, VCE = 100 Vdc  
500  
500  
2N3771  
2N3772  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

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