Datasheet > JANTX2N3749

JANTX2N3749

更新时间： 2024-11-30 22:57:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关
页数	文件大小	规格书
2页	58K
描述
PNP POWER SILICON TRANSISTOR

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数据手册

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JANTX2N3749 数据手册

TECHNICAL DATA

PNP POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 315

Devices

Qualified Level

JAN

2N2880

2N3749

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

Value

Units

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

V_CEO

V_CBO

V_EBO

I_B

110

8.0

0.5

5.0

Collector Current

I_C

Total Power Dissipation @ T_A= 25⁰C ⁽¹⁾

2.0

P_T

@ T_C= 100⁰C ⁽²⁾

-65 to +200

⁰C

Operating & Storage Junction Temperature Range

T_op_,T

stg

TO-59*

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

Symbol

Max.

Unit

⁰C/W

3.33

qJC

1) Derate linearly 11.4 mW/⁰C for T_A> 25⁰C

2) Derate linearly 300 mW/⁰C for T_C> 100⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

Emitter-Base Breakdown to Voltage

I_E= 10 mAdc

110

8.0

Vdc

V_(BR)

CEO

V_(BR)

CBO

Vdc

V_(BR)

EBO

Collector-Emitter Cutoff Current

V_CE= 60 Vdc

Collector-Base Cutoff Current

V_CB= 80 Vdc

Collector-Emitter Cutoff Current

V_CE= 110 Vdc, V_BE= -0.5

Emitter-Base Cutoff Current

V_EB= 6.0 Vdc

0.2

1.0

0.2

I_CEO

I_CBO

I_CEX

I_EBO

mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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