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JANTX2N3762 PDF预览

JANTX2N3762

更新时间: 2024-11-03 22:57:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关小信号双极晶体管
页数 文件大小 规格书
2页 64K
描述
PNP SWITCHING SILICON TRANSISTOR

JANTX2N3762 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.14
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Qualified参考标准:MIL-19500/396J
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):180 MHz最大关闭时间(toff):115 ns
最大开启时间(吨):43 nsBase Number Matches:1

JANTX2N3762 数据手册

 浏览型号JANTX2N3762的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SWITCHING SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 396  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N3762  
2N3762L  
2N3763  
2N3763L  
2N3764  
2N3765  
MAXIMUM RATINGS  
Ratings  
2N3762* 2N3763*  
Symbol  
Unit  
2N3764  
2N3765  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
60  
Vdc  
Vdc  
VCEO  
VCBO  
VEBO  
IC  
40  
60  
TO-39* (TO-205AD)  
5.0  
1.5  
Vdc  
2N3762, 2N3763  
Adc  
2N3762* 1 2N3764 2  
2N3763*  
2N3765  
Total Power Dissipation @ TA = +250C  
Operating & Storage Junction Temp. Range  
1.0  
0.5  
W
PT  
-55 to +200  
0C  
Top, T  
stg  
TO-5*  
THERMAL CHARACTERISTICS  
Characteristics  
2N3762L, 2N3763L  
Symbol  
Max.  
2N3762*  
2N3763*  
Unit  
2N3764  
2N3765  
88  
Thermal Resistance Junction-to-Case  
60  
0C/W  
R
qJC  
TO-46* (TO-206AB)  
2N3764, 2N3765  
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices  
1) Derate linearly at 5.71 mW/0C for TA > +250C  
2) Derate linearly at 2.86 mW/0C for TA > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
40  
60  
Vdc  
2N3762, 2N3764  
2N3763, 2N3765  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 20 Vdc  
VCB = 30 Vdc  
VCB = 40 Vdc  
VCB = 60 Vdc  
100  
100  
10  
2N3762, 2N3764  
2N3763, 2N3765  
2N3762, 2N3764  
2N3763, 2N3765  
hAdc  
mAdc  
ICBO  
10  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTX2N3762 替代型号

型号 品牌 替代类型 描述 数据表
2N3762 MICROSEMI

完全替代

PNP SWITCHING SILICON TRANSISTOR
JANTX2N3762L MICROSEMI

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PNP SWITCHING SILICON TRANSISTOR
JAN2N3762L MICROSEMI

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PNP SWITCHING SILICON TRANSISTOR

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