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JANTX2N3766 PDF预览

JANTX2N3766

更新时间: 2024-02-24 01:31:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 57K
描述
NPN POWER SILICON TRANSISTOR

JANTX2N3766 技术参数

生命周期:Transferred包装说明:TO-213AA, 2 PIN
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.77外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-213AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified参考标准:MIL
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

JANTX2N3766 数据手册

 浏览型号JANTX2N3766的Datasheet PDF文件第2页浏览型号JANTX2N3766的Datasheet PDF文件第3页浏览型号JANTX2N3766的Datasheet PDF文件第4页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 518  
Devices  
Qualified Level  
JAN  
2N3766  
2N3767  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol 2N3766 2N3767 Units  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
80  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
VCEO  
VCBO  
VEBO  
IB  
80  
100  
6.0  
2.0  
4.0  
25  
Collector Current  
IC  
Total Power Dissipation  
@ TC = +250C (1)  
PT  
-65 to +200  
0C  
Operating & Storage Temperature Range  
Top, T  
stg  
TO-66*  
(TO-213AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C  
7.0  
R
qJC  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N3766  
2N3767  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
VCE = 80 Vdc  
Collector-Emitter Cutoff Current  
VCE = 80 Vdc, VBE = 1.5 Vdc  
VCE = 100 Vdc, VBE = 1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 80 Vdc  
500  
500  
2N3766  
2N3767  
ICEO  
mAdc  
mAdc  
10  
10  
2N3766  
2N3767  
ICEX  
10  
10  
2N3766  
2N3767  
ICBO  
mAdc  
mAdc  
VCB = 100 Vdc  
Emitter-Base Cutoff Current  
VEB = 6.0 Vdc  
IEBO  
500  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTX2N3766 替代型号

型号 品牌 替代类型 描述 数据表
2N3767 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR

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