Datasheet > 2N3743

2N3743

更新时间： 2024-11-30 22:49:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管高压
页数	文件大小	规格书
3页	64K
描述
PNP HIGH VOLTAGE SILICON TRANSISTOR

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数据手册
替代型号

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2N3743 数据手册

TECHNICAL DATA

PNP HIGH VOLTAGE SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 397

Devices

Qualified Level

JAN, JANTX

JANTXV

2N3743

2N4930

2N4931

MAXIMUM RATINGS

Ratings

Sym 2N3743 2N4930 2N4931 Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

300

200

5.0

250

Vdc

V_CEO

V_CBO

V_EBO

I_C

300

250

Vdc

200

mAdc

Total Power Dissipation

@T_A= +25⁰C ¹

@T_C= +25⁰C ²

1.0

5.0

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

TO-39*

stg

(TO-205AD)

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

Thermal Resistance Junction-to-Case

qJC

1) Derate linearly 5.71 mW/⁰C for T_A> +25⁰C

2) Derate linearly 28.6 mW/⁰C for T_C> +25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 1.0 mAdc

300

200

250

2N3743

2N4930

2N4931

Vdc

V_(BR)

CEO

Collector-Emitter Breakdown Voltage

300

200

250

I_C= 100 mAdc

2N3743

2N4930

2N4931

Vdc

V_(BR)

CBO

Emitter-Base Breakdown Voltage

I_E= 100 mAdc

5.0

V_(BR)

EBO

Collector-Base Cutoff Current

V_CB= 250 Vdc

V_CB= 150 Vdc

250

2N3743

2N4930

2N4931

I_CBO

hAdc

V_CB= 200 Vdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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2N3743 替代型号

型号	品牌	替代类型	描述	数据表
JAN2N3743	MICROSEMI	功能相似	Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JANTX2N3743	MICROSEMI	功能相似	PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397

与2N3743相关器件

型号	品牌	获取价格	描述	数据表
2N3743LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 P
2N3744	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 5A I(C) \| STR-10
2N3744E3	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
2N3745	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 5A I(C) \| STR-10
2N3745E3	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
2N3746	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| STR-10
2N3746E3	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
2N3747	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 5A I(C) \| STR-10
2N3747E3	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
2N3748	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 5A I(C) \| STR-10