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2N3762 PDF预览

2N3762

更新时间: 2024-01-01 09:57:28
品牌 Logo 应用领域
SEMICOA 晶体晶体管放大器
页数 文件大小 规格书
2页 51K
描述
Type 2N3762 Geometry 6706 Polarity PNP

2N3762 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.67JESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2N3762 数据手册

 浏览型号2N3762的Datasheet PDF文件第2页 
Data Sheet No. 2N3762  
Ge ne ric Pa rt Numbe r:  
2N3762  
Type 2N3762  
Geometry 6706  
Polarity PNP  
Qual Level: JAN - JANTXV  
REF: MIL-PRF-19500/396  
Features:  
·
General-purpose transistor for  
switching and amplifier applica-  
tons.  
·
·
Housed in a TO-39 case.  
Also available in chip form using  
the 6706 chip geometry.  
·
The Min and Max limits shown are  
per MIL-PRF-19500/396 which  
Semicoa meets in all cases.  
TO-39  
Maximum Ratings  
TC = 25oC unless otherwise specified  
Rating  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
40  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current, Continuous  
Operating Junction Temperature  
Storage Temperature  
40  
V
5.0  
V
1.5  
mA  
oC  
TJ  
-55 to +200  
-55 to +200  
oC  
TSTG  

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