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JANSR2N7380U3

更新时间: 2024-09-18 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 549K
描述
Rad hard, 100V, 9.1A, single, N-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL

JANSR2N7380U3 技术参数

生命周期:Active包装说明:CHIP CARRIER, R-CBCC-N3
Reach Compliance Code:compliant风险等级:5.83
雪崩能效等级(Eas):150 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):14.4 A最大漏极电流 (ID):14.4 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):57.6 A
参考标准:MIL-19500; RH - 100K Rad(Si)表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):100 ns最大开启时间(吨):110 ns

JANSR2N7380U3 数据手册

 浏览型号JANSR2N7380U3的Datasheet PDF文件第2页浏览型号JANSR2N7380U3的Datasheet PDF文件第3页浏览型号JANSR2N7380U3的Datasheet PDF文件第4页浏览型号JANSR2N7380U3的Datasheet PDF文件第5页浏览型号JANSR2N7380U3的Datasheet PDF文件第6页浏览型号JANSR2N7380U3的Datasheet PDF文件第7页 
IRHNJ7130 (JANSR2N7380U3)  
PD-93820E  
Radiation Hardened Power MOSFET  
Surface Mount (SMD-0.5)  
100V, 14.4A, N-channel, Rad Hard HEXFETTechnology  
Features  
Product Summary  
Single event effect (SEE) hardened  
BVDSS: 100V  
ID : 14.4A  
RDS(on),max : 180m  
QG,max : 40nC  
REF: MIL-PRF-19500/614  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Light weight  
Surface Mount  
ESD rating: Class 1C per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
SMD-0.5  
Thermal management  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This  
technology has over a decade of proven performance and reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low  
gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.  
These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching  
and temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHNJ7130  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
SMD-0.5  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
500 krad(Si)  
500 krad(Si)  
JANSR2N7380U3  
IRHNJ3130  
SMD-0.5  
SMD-0.5  
SMD-0.5  
SMD-0.5  
SMD-0.5  
JANS  
COTS  
JANSF2N7380U3  
IRHNJ4130  
JANS  
COTS  
JANSG2N7380U3  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2022-10-14  
 
 
 
 
 

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