生命周期: | Active | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
Reach Compliance Code: | compliant | 风险等级: | 5.83 |
雪崩能效等级(Eas): | 150 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 14.4 A | 最大漏极电流 (ID): | 14.4 A |
最大漏源导通电阻: | 0.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 75 W | 最大脉冲漏极电流 (IDM): | 57.6 A |
参考标准: | MIL-19500; RH - 100K Rad(Si) | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 100 ns | 最大开启时间(吨): | 110 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSR2N7381 | INFINEON |
获取价格 |
Rad hard, 200V, 9.4A, single, N-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100 k | |
JANSR2N7382 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
JANSR2N7383 | ETC |
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-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package | |
JANSR2N7389 | INFINEON |
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TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | |
JANSR2N7389U | INFINEON |
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Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC | |
JANSR2N7390 | INFINEON |
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RADIATION HARDENED POWER MOSFET | |
JANSR2N7390U | INFINEON |
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Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LC | |
JANSR2N7391 | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A) | |
JANSR2N7392 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA ) | |
JANSR2N7394 | INFINEON |
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Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 kra |