JANSR2N7395
Formerly FSL130R4
June 1998
8A, 100V, 0.230 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
Description
• 8A, 100V, r
= 0.230Ω
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
DS(ON)
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS
V
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
DM
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
2
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Ordering Information
PART NUMBER
PACKAGE
TO-205AF
BRAND
JANSR2N7395
JANSR2N7395
Symbol
Die Family TA17636.
MIL-PRF-19500/631.
Package
TO-205AF
G
D
S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 4371.1
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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