JANSR2N7389

更新时间： 2024-11-19 22:24:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	128K
描述
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JANSR2N7389 数据手册

PD - 90882F

IRHF9130

JANSR2N7389

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

100V, P-CHANNEL

REF: MIL-PRF-19500/630

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHF9130

100K Rads (Si)

0.30Ω

-6.5A

JANSR2N7389

IRHF93130 300K Rads (Si)

-6.5A

JANSF2N7389

International Rectifier’s RAD-Hard HEXFET^TMtechnol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

TO-39

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

LowTotal Gate Charge

ProtonTolerant

SimpleDriveRequirements

EaseofParalleling

Hermetically Sealed

Ceramic Package

LightWeight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-6.5

-4.1

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-26

@ T = 25°C

W/°C

Linear Derating Factor

0.2

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

165

-6.5

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

2.5

V/ns

dv/dt

-22

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 ( 0.063 in. (1.6mm) from case for 10s)

0.98 (typical)

For footnotes refer to the last page

www.irf.com

2/18/03

12 3 4 5 6 7 8

中文翻译

下载PDF

JANSR2N7389 替代型号

型号	品牌	替代类型	描述	数据表
IRHF9130	INFINEON	完全替代	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
JANSF2N7389	INFINEON	完全替代	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

与JANSR2N7389相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7389U	INFINEON	获取价格	Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in an 18-pin LCC package - 18-pin LCC
JANSR2N7390	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET
JANSR2N7390U	INFINEON	获取价格	Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LC
JANSR2N7391	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)
JANSR2N7392	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA )
JANSR2N7394	INFINEON	获取价格	Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 kra
JANSR2N7394D	INFINEON	获取价格	暂无描述
JANSR2N7394U	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
JANSR2N7395	INTERSIL	获取价格	8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7396	INTERSIL	获取价格	5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET

与JANSR2N7389相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7389

JANSR2N7389 数据手册

JANSR2N7389 替代型号

与JANSR2N7389相关器件

与JANSR2N7389相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7389

JANSR2N7389 数据手册

JANSR2N7389 替代型号

与JANSR2N7389相关器件

与JANSR2N7389相关文章

您还可以找

您在本页遇到什么问题？