Datasheet > JANSR2N7397

JANSR2N7397

更新时间： 2024-11-19 22:24:47

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	48K
描述
4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET

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JANSR2N7397 数据手册

JANSR2N7396

Formerly FSL230R4

June 1998

5A, 200V, 0.460 Ohm, Rad Hard,

N-Channel Power MOSFET

Features

Description

• 5A, 200V, r

= 0.460Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

DS(ON)

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

- 3.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Ordering Information

Also available at other radiation and screening levels. See us

on the web, Intersil’ home page:http://www.intersil.com.

Contact your local Intersil Sales Ofﬁce for additional

information.

PART NUMBER

PACKAGE

TO-205AF

BRAND

JANSR2N7396

Die Family TA17637.

MIL-PRF-19500/631.

Symbol

Package

TO-205AF

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4452.1

2-34

12 3 4 5 6 7 8

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与JANSR2N7397相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7398	INTERSIL	获取价格	2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7399	INTERSIL	获取价格	11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7400	INTERSIL	获取价格	8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7401	INTERSIL	获取价格	6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7402	INTERSIL	获取价格	3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7402	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal
JANSR2N7403	INTERSIL	获取价格	22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7404	INTERSIL	获取价格	15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7405	INTERSIL	获取价格	25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7406	INTERSIL	获取价格	24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET

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